Unit – V
- Comparison
of CB,CE & CC amplifier configurations.
- A
transistor is connected in CC configuration and its h-parameters are hie=
1100Ω, hre=2.5x 10-4, hfe=50, hoe=24μ
A/V, the circuit uses RL=10kΩ and RS=1KΩ. calculate
gain Ai, input resistance Ri & voltage gain Av
of this amplifier.
- A
transistor used in CE amplifier connection has the following set of
h-parameters hie= 1kΩ, hre=5 x 10-4, hfe=100,
hoe=5 x 10-4 Ω-1, RL=5kΩ and RS=15KΩ.
Determine i/p impedance ,o/p impedance, current gain & voltage gain.
- Explain
each & every component in common emitter amplifier circuit.
- Analyse
CE amplifier circuit using h-parameters.
Unit-VI
1. Explain
the principle of MOSFET in depletion mode with neat sketches and o/p
characteristics.
2. Draw
the structures of an n-channel JFET and explain its principle of operation. Why
is the name field effect used for the device? Show the circuit symbol of JFET.
3. a.
Define rd, gm, and μ of JFET.
b. Write the
features of FET and its types.
4. Explain
drain transfer characteristics of JFET.
5. a.
Explain types of MOSFET.
b. Explain the operation of
Enhancement n-channel MOSFET with drain & transfer characteristics.
Unit- VII
- Explain
UJT characteristics with neat sketches.
- a.
Explain UJT relaxation oscillator with neat graph.
b. Explain
application of UJT.
- a.
Explain CS amplifier with Fixed bias.
b. Find Zi, Zo,
Av for fixed bias circuit RG=1MΩ , RD=5.1KΩ, VDD= 10v ,VGS=
-1.5V, gm=2ms.
- Explain
the operation of common drain amplifier.
- Explain
with neat sketches FET CS with voltage divider bias.
Unit-VIII
- Explain
the construction and V-I characteristics of a tunnel diode with help of
energy band diagrams.
- Draw the basic structure of SCR and
explain its characteristics.
- Explain
construction & characteristics of schottky diode and its applications.
- Explain
the operation of photodiode, How it will work as variable resistance
device , its applications.
- Explain
- Varactor
diode
- Schottky
barrier diode.
0 comments:
Post a Comment
Your comments: